The agreement governs the supply of over 120 million dollars of advanced 150mm silicon carbide wafers by SiCrystal to STMicroelectronics.
Jean-Marc Chery, President and CEO of STMicroelectronics, commented, “This additional long-term SiC substrate supply agreement comes on top of the external capacity we have already secured and the internal capacity we are ramping. It will enable ST to increase the volume and balance of the wafers we will need to meet the strong demand ramp-up from customers for automotive and industrial programs over the next years.”
Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company, added, “SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC wafers for many years. We are very pleased to enter into this supply agreement with our longstanding customer ST. We will continue to support our partner to expand silicon carbide business by ramping up wafer quantities continuously and by providing reliable quality at all times.”
The adoption of power solutions with SiCs is accelerating in both the automotive and industrial markets. With this agreement, the two companies will contribute to the widespread use of SiC in these markets.