Toshiba's ASIC (Application Specific IC) and FFSA platforms deliver efficient solutions for custom SoC development. All FFSA devices have a common silicon-based master layer that is used in combination with upper metal layers that are reserved and allow device customisation.
The FFSA platform looks to meet customer requirements for high performance and low power consumption; however, by limiting the customisation to just the metal layer masks, it also drastically reduces development costs. As a result, samples and mass-produced devices can be delivered in a significantly shorter time than for conventional ASICs.
Customers using the FFSA ASIC design methodology and library will be able to secure higher performance and lower power consumption than is possible with Field Programmable Gate Arrays (FPGAs), according to Toshiba.
The FFSA 130nm process is added to Toshiba’s current 28, 40, and 65nm process portfolio adding another option for industrial equipment. The 130nm node process offer different master slices for up to 664kb of RAM and around 912,000 gates per device.
Devices designed on the platform will be manufactured by Japan Semiconductor, a subsidiary of Toshiba Electronic Devices & Storage Corporation. which has a long record in manufacturing ASIC, ASSP and microcomputers. This will ensure long-term supply continuity and meet or exceed the needs of customer business continuity plans.
Devices based on the new FFSA 130nm node process will be able to deliver the performance and integration needed for multiple application sectors including industrial equipment, communication technology, OA equipment and more.