Flexible magnetic memory devices are a fundamental component required for wearable electronics and biomedical devices but there are still challenges in making high performance memory chips on flexible substrates without sacrifcing performance.
According to the researchers – from Yonsei University, Ghent University and Singapore's Institute of Materials Research and Engineering – the malleable memory chip is a further step towards making flexible, wearable electronics a reality in the near future.
The magnetoresistive random access memory (MRAM) uses a magnesium oxide (MgO)-based magnetic tunnel junction (MTJ) to store data. MRAM outperforms conventional RAM in many aspects, including the ability to retain data after a power supply is cut off, high processing speed, and low power consumption.
The research team first grew the MTJ on a silicon surface, and then etched away the underlying silicon. Using a transfer printing approach, the team implanted the memory on a flexible PTFE surface while controlling the amount of strain.
Prof Yang said: “Our experiments showed that our device’s tunnelling magnetoresistance could reach up to 300% – it’s like a car having extraordinary levels of horsepower. We have also managed to achieve improved abruptness of switching. With all these enhanced features, the flexible magnetic chip is able to transfer data faster. We are the first team to fabricate magnetic memory on a flexible surface, and this significant milestone gives us the impetus to further enhance the performance of flexible memory devices and contribute towards the flexible electronics revolution.”
Prof Yang and his team are planning to apply their technique to other electronic components.