LONDON - Mosaid Technologies Inc, a licensor ofmemory-related semiconductor intellectual property, has announced that it isnow sampling a 16-die stacked NAND flash memory component with a memorycapacity of 512-Gbits.
All 16 die in the multi-chip package (MCP) are connected toa single byte-wide HyperLink channel that offers 333-Mbytes per second datarate, Mosaid (Ottawa, Ontario) said.
Data bandwidth advantages are claimed for Mosaid's HyperLinktechnology and it is offered as a method for system engineers to designgigabyte per second bandwidth and terabyte capacity solid state drives (SSDs)with a single controller chip.
The component combines a stack of 16 industry-standard32-Gbit NAND flash memory die with two HyperLink NAND (HLNAND) interfacedevices to achieve the data rate. Conventional NAND flash MCP designs cannotstack more than four NAND die without suffering from performance degradation,and would require two or more channels to deliver similar throughput, Mosaidsaid.
The MCP offers 333-Mbyte/s data rate at 1.8-V operation insimultaneous read and write directions. The component is packaged in a 100-ballBGA package measuring 18 mm by 14 mm.
"The 16-die stack 512-Gbit HLNAND MCP demonstrates thesuperior scalability of HLNAND's ring architecture compared to the parallel busarchitecture used in industry standard NAND Flash products," said Jin-KiKim, vice president of R&D at Mosaid, in a statement. "HLNAND's ringarchitecture allows a virtually unlimited number of NAND die to be connected ona single channel without performance degradation."
This story was originally posted by EETimes.
