Vishay introduced SQJA81EP, a globally advanced AEC-Q101 qualified P-Channel 80 V Trenchfet ® MOSFET. The new Vishay Siliconix SQJA81EP on resistance reaches an 80 V p channel device level to improve power density and energy efficiency in automotive applications.
The on-resistance of the recently released automotive MOSFET is 28% lower than that of the closest DPAK package rival devices, 31% lower than that of the previous generation solution, and the occupant area is reduced by 50%, which helps to reduce on-power consumption, save energy, and increase power density to improve output. SQJA81EP has an excellent gate charge of only 52 nC under 10 V conditions, reducing gate drive losses and the product of gate charge and on-resistance, namely the MOSFET optimal value factor (FOM) for power conversion applications, to achieve industry excellence.
Operating at +175°C, the device meets the requirements of robustness and reliability for automotive applications such as reverse polarity protection, battery management, high-side load switches and LED lighting. In addition, the SQJA81EP gull wing lead structure helps improve automatic optical inspection (AOI) capabilities, eliminating mechanical stress and improving board level reliability.
The device's -80 V rating provides the safety margin required to support several commonly used input voltage rails, including 12 V, 24 V, and 48 V systems. The increased power density of MOSFET saves PCB space in these systems by reducing the number of components required in parallel. In addition, as a P-channel device, the SQJA81EP enables a simpler gate drive design without the charge pump required for its N-channel counterparts. MOSFET is lead-free (Pb), halogen-free and RoHS compliant, and is 100% RG and UIS tested.
Samples and bulk production of SQJA81EP are now available, with a 14-week supply cycle.
