On show includes the X-GaN transistors, designed to provide superior switching performance and high reliability and robustness thanks to their fast switching, highly conductive structure that suppresses current collapse.
These benefits are demonstrated in new reference designs of a 3kW totem pole PFC and of a 65W active clamped flyback AC adapter.
Panasonic has also developed a single chip GaN bi-directional switch capable of operating in 4 quadrants, by adopting an innovative dual gate device structure. This device enables a significant reduction of conduction losses and of the number of components needed in topologies such as multilevel inverters, matrix converters and Vienna rectifiers.
A range of low inductive power modules for xEV drivetrain embed Panasonic's DioMOS (Diode-integrated) MOSFETs, will also be on its stand.
The DioMOS structure enables a size reduction of SiC modules by integrated free-wheeling diode functionality inside the MOSFET.
For further product information, please visit: http://industry.panasonic.eu.
