Spintronics devices, which use the charge and spin of electrons to record information, are attracting much attention as a type of memory device. However, spintronics elements are difficult to use in high integration due to their complex structures and they require a high level of write current.
The approach combines a lithium ion conducting solid electrolyte with Fe3O4 a magnetic material, enabling the insertion and removal of ions by applying a voltage. In this way, the research group successfully tuned magnetic properties including magnetoresistance and magnetization.
The technique could enable spintronics devices to control magnetism at a lower current level than conventional devices. It could also allow them to be simpler and more highly integrated. This technique is expected to enable the development of high-density high-capacity memory devices with low power consumption, using conventional semiconductor processes.
